|Bid||155.21 x 1000|
|Ask||156.00 x 1800|
|Day's range||151.91 - 155.31|
|52-week range||139.48 - 188.12|
|Beta (5Y monthly)||1.00|
|PE ratio (TTM)||20.13|
|Forward dividend & yield||5.20 (3.35%)|
|Ex-dividend date||30 Oct 2023|
|1y target est||N/A|
Texas Instruments (TI) (Nasdaq: TXN) today announced the expansion of its low-power gallium nitride (GaN) portfolio, designed to help improve power density, maximize system efficiency, and shrink the size of AC/DC consumer power electronics and industrial systems. TI's overall portfolio of GaN field-effect transistors (FETs) with integrated gate drivers addresses common thermal design challenges, keeping adapters cooler while pushing more power in a smaller footprint.
Texas Instruments Incorporated (TI) (Nasdaq: TXN) Senior Vice President and Chief Financial Officer Rafael Lizardi will speak at the UBS Global Technology Conference in Scottsdale, Arizona, on Tuesday, Nov. 28, at 8:55 a.m. Mountain time. Lizardi will field questions from analysts and investors, as well as discuss TI's business outlook and its strategy to address key markets for its analog and embedded processing technologies and how these capabilities position the company for growth.
Texas Instruments (TI) (Nasdaq: TXN) today broke ground on its new 300-mm semiconductor wafer fabrication plant (or "fab") in Lehi, Utah. Joined by Utah Governor Spencer Cox, state and local elected officials, as well as community leaders, TI President and Chief Executive Officer Haviv Ilan celebrated the first steps toward construction of the new fab, LFAB2, which will connect to the company's existing 300-mm wafer fab in Lehi. Once completed, TI's two Utah fabs will manufacture tens of million